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| BL FEATURES o o o GALAXY ELECTRICAL 1N914,1N914A,1N914B REVERSE VOLTAGE: CURRENT DO - 35 75 V 75 mA SMALL SIGNAL SWITCHING DIODE Glass sealed envelope. (MSD) VRM=100V guaranteed High reliability MECHANICAL DATA o o o Case: DO-35, glass case Polarity: Color band denotes cathode Weight: 0.004 ounces, 0.13 grams MAXIMUM RATINGS (Ratings at 25ae ambient temperature unless otherwise specified.(c) 1N914,1N914A,1N914B Maximum DC reverse voltage Maximum recurrent peak reverse voltage Average forward rectified current half wave rectification with resistive load t<1ms t=1ms t=1s Power dissipation (note) Junction temperature Storage temperature range Forward surge current UNITS V V mA A mW ae ae VR VRM IO IFSM Ptot Tj TSTG 75 100 75 4.0 1.0 0.5 250 175 - 65 --- + 175 Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. ELECTRICAL CHARACTERISTICS (Ratings at 25ae Min Forw ard voltage @1N914,1N914A,I F=10mA 1N914B,I F=5mA 1N914B,I F=100mA Leakage current @V R=20V @V R=75V @V R=20V,Tj=150 Capacitance @ V R=0V,f=1MHZ ambient temperature unless otherwise specified.(c) Typ - Max 1.0 0.72 1.0 25 5 50 4 8 2.5 500 UNITS V nA A ae A pF ns V ae /W www.galaxycn.com VF IR Ctot trr Vfr RjA 0.62 - Reverse recovery time @I F=10mA,IR=10mA, RL=100,measured at I R=1mA Voltage rise w hen sw itching on tested w ith 50mA pulses t r=20ns Thermal resistance junction to ambient (note ) Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Document Number 0268015 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- ADMISSIBLE POWER DISSIPATION NNNNNN VERSUS AMBIENT TEMPERATURE 1N914,1N914A,1N914B FIG.2 -- FORWARD CHARACTERISTICS mW 500 450 400 mA 10 3 10 2 Ptot 350 300 250 200 150 100 50 0 0 100 200ae IF 10 1N914B 1N914,1N914A 1 10 -1 10 -2 0 1 TA VF 2V FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 IFSM 10 V=tp/T tp IFSM T=1/fp 1 n=0 0.1 0.2 0.5 T 0.1 10 -5 10 -3 10 -2 10 -1 1 10S tp www.galaxycn.com Document Number 0268015 BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES FIG.4 -- RECTIFICATION EFFICIENCY JJJJJJJJMEASUREMENT CIRCUIT 1N914,1N914A,1N914B FIG.5 -- RELATIVE CAPACITANCE VERSUS JJJJJJJJJJJJJJ VOLTAGE 1.1 D.U.T. 60 VRF=2V 2nF 5K VO Ctot(VR) Ctot(OV) 1.0 TJ=25 f=1MHz 0.9 0.8 0.7 0 2 4 6 VR 8 10V FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATUREFF FIG.7 -- DYNAMIC FORWARD RESISTANCE FFFVERSUS FORWARD CURRENT nA 10 4 10 4 TJ=25ae f=1KHz 10 3 10 3 rF 10 2 10 2 10 10 VR=20V 1 1 0 100 200ae 10 -2 10 -1 1 10 IF 10 2 mA www.galaxycn.com Document Number 0268015 BLGALAXY ELECTRICAL 3. |
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